This work was supported by the Engineering and Physical Sciences Research Council, Technology Strategy Board and EC FP7 ITN “FUNMOLS” project no. 212942. CMOS=complementary metal-oxide semiconductor.
Synthesis of Covalently Linked Molecular Bridges between Silicon Electrodes in CMOS-Based Arrays of Vertical Si/SiO2/Si Nanogaps†
Article first published online: 26 JUL 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Angewandte Chemie International Edition
Volume 50, Issue 37, pages 8722–8726, September 5, 2011
How to Cite
Ashwell, G. J., Phillips, L. J., Robinson, B. J., Barnes, S. A., Williams, A. T., Urasinska-Wojcik, B., Lambert, C. J., Grace, I. M., Cox, T. I. and Sage, I. C. (2011), Synthesis of Covalently Linked Molecular Bridges between Silicon Electrodes in CMOS-Based Arrays of Vertical Si/SiO2/Si Nanogaps. Angew. Chem. Int. Ed., 50: 8722–8726. doi: 10.1002/anie.201102791
- Issue published online: 1 SEP 2011
- Article first published online: 26 JUL 2011
- Manuscript Revised: 24 MAY 2011
- Manuscript Received: 21 APR 2011
- Engineering and Physical Sciences Research Council
- EC FP7 ITN. Grant Number: 212942
- molecular electronics;
Silicon nanogaps were bridged in situ by grafting 4-ethynylbenzaldehyde to activate the electrodes and coupling 2,6-diaminoanthra-9,10-quinone to link the coatings. The bridged structures exhibit currents of 11–14 nA at 1 V. The process is reversed by soaking in acidified solution, which causes the current to diminish.