High Photocurrent in Silicon Photoanodes Catalyzed by Iron Oxide Thin Films for Water Oxidation

Authors

  • Kimin Jun,

    1. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge (USA)
    2. The Center for Bits and Atoms, Media Laboratory, Massachusetts Institute of Technology, 20 Ames street, E15-413, Cambridge, MA 02139 (USA)
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  • Yun Seog Lee,

    1. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge (USA)
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  • Tonio Buonassisi,

    1. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge (USA)
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  • Prof. Joseph M. Jacobson

    Corresponding author
    1. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge (USA)
    2. The Center for Bits and Atoms, Media Laboratory, Massachusetts Institute of Technology, 20 Ames street, E15-413, Cambridge, MA 02139 (USA)
    • Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge (USA)
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  • We acknowledge Kurt Broderick at the Microsystem Technology Laboratory, MIT for help with various fabrication processes. We also acknowledge Dr. Seungwoo Lee and Rupak Chakraborty at MIT for the electrochemical setup. This work was financially supported by MIT’s Center for Bits and Atoms, the Chesonis Family Foundation, and an MIT Energy Initiative seed grant. K.J. was supported by the Samsung Scholarship Foundation.

Abstract

original image

Silicon splits: The application of silicon to water oxidation is limited due to unfavorable interface properties. However, these can be circumvented by using a high-performance silicon photoanode with a catalytically active iron oxide thin film (see picture). This approach results in photocurrents as high as 17 mA cm−2 under 1 sun and zero overpotential conditions.

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