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Generation of a Porous Luminescent Structure Through Ultrasonically Induced Pathways of Silicon Modification

Authors

  • Dr. Ekaterina V. Skorb,

    Corresponding author
    1. Interface Department, Max Planck Institute of Colloids and Interfaces, Am Mühlenberg 1, 14476 Potsdam (Germany)
    • Interface Department, Max Planck Institute of Colloids and Interfaces, Am Mühlenberg 1, 14476 Potsdam (Germany)
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  • Dr. Daria V. Andreeva,

    1. Physical Chemistry II, University of Bayreuth, Universitatstrasse 30, 95440 Bayreuth (Germany)
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  • Prof. Helmuth Möhwald

    1. Interface Department, Max Planck Institute of Colloids and Interfaces, Am Mühlenberg 1, 14476 Potsdam (Germany)
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  • The authors gratefully acknowledge helpful discussions with Dr. Klaus Lips and Dr. Enno Malguth (Helmholtz-Zentrum Berlin für Materialien und Energie, Institut für Silizium-Photovoltaik). We thank Dr. Nelia Wanderka (Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Angewandte Materialforschung) for kindly providing the HRTEM measurements. This work was generously supported by the Alexander von Humboldt Foundation, NATO CLG 984267 and SFB 840.

Abstract

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Porous silicon with unique optical properties was formed through an ultrasonication method. This technique allows the one-step formation of silicon with a purposefully variable porous structure, provides for the possibility of patterned surface-selective modification, and forms photoluminescent centers and defect states, which can act as centers for charge separation.

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