We gratefully acknowledge support from the US Department of Energy (Columbia, UCF, UCR: DE-FG02-07ER15842) for simulation and analysis of the reactive properties of MoSx films, and the US National Science Foundation (UCR, Columbia U.: DMR 1106210) for novel methods for the growth of MoS2 and related films.
An MoSx Structure with High Affinity for Adsorbate Interaction†
Article first published online: 11 SEP 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Angewandte Chemie International Edition
Volume 51, Issue 41, pages 10284–10288, October 8, 2012
How to Cite
Sun, D., Lu, W., Le, D., Ma, Q., Aminpour, M., Alcántara Ortigoza, M., Bobek, S., Mann, J., Wyrick, J., Rahman, T. S. and Bartels, L. (2012), An MoSx Structure with High Affinity for Adsorbate Interaction . Angew. Chem. Int. Ed., 51: 10284–10288. doi: 10.1002/anie.201205258
- Issue published online: 1 OCT 2012
- Article first published online: 11 SEP 2012
- Manuscript Received: 4 JUL 2012
- US Department of Energy. Grant Number: DE-FG02-07ER15842
- National Science Foundation. Grant Number: 1106210
An Mo2S3 monolayer grown on copper coexists with well-known MoS2 patches and triangular islands. Imaging by scanning tunneling microscopy after exposure to anthraquinone shows the new structure to be far more active in adsorption, permitting even the formation of a compressed adsorbate layer before other surface areas, including the supposedly reactive brim areas of MoS2 islands, capture this adsorbate.