Nanostructure Engineering and Doping of Conjugated Carbon Nitride Semiconductors for Hydrogen Photosynthesis

Authors

  • Zhenzhen Lin,

    1. Research Institute of Photocatalysis, Fujian Provincial Key Laboratory of Photocatalysis-State Key Laboratory Breeding Base, and College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350002 (China)
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  • Prof. Xinchen Wang

    Corresponding author
    1. Research Institute of Photocatalysis, Fujian Provincial Key Laboratory of Photocatalysis-State Key Laboratory Breeding Base, and College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350002 (China)
    • Research Institute of Photocatalysis, Fujian Provincial Key Laboratory of Photocatalysis-State Key Laboratory Breeding Base, and College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350002 (China)
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  • Supported by the National Basic Research Program of China (2013CB632405), the National Natural Science Foundation of China (21033003, 21173043), and the Department of Education of Fujian Province in China. The authors appreciate Prof. L. Li of Xiamen University (China) for the AFM measurements.

Abstract

original image

Going flat out: Simultaneous modifications of the textural, surface, and electronic structures of a rigid conjugated carbon nitride polymer has been achieved using direct co-condensation of urea and Ph4BNa. This method gives boron-doped carbon nitride nanosheets (see picture) that optimize the capture of light, improve the charge-separation kinetics, and enhance the surface reactivity for hydrogen photosynthesis.

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