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Transferable Graphene Oxide by Stamping Nanotechnology: Electron-Transport Layer for Efficient Bulk-Heterojunction Solar Cells

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Errata

This article is corrected by:

  1. Errata: Corrigendum: Transferable Graphene Oxide by Stamping Nanotechnology: Electron-Transport Layer for Efficient Bulk-Heterojunction Solar Cells Volume 52, Issue 13, 3553, Article first published online: 20 March 2013

  • Research at UCSB (including the fabrication and testing of solar cells and the measurements and analysis of the UPS data) was supported by the National Science Foundation (DMR0856060). J.H.P. acknowledges the support from NRF grants (2010-0029321).

Abstract

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Layer by layer: Electron-transport layers (ETLs) of transferable graphene oxide (GO) inserted by using a stamping nanotechnology (see picture) result in bulk-heterojunction (BHJ) solar cells with enhanced power conversion efficiency because of enhanced electron-charge transport and reduced electronic charge barrier with low series resistance. The GO ETL also increases the stability of the device in air.

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