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Self-Assembled Monolayers of Phosphonic Acids with Enhanced Surface Energy for High-Performance Solution-Processed N-Channel Organic Thin-Film Transistors

Authors

  • Danqing Liu,

    1. Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong (China)
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  • Xiaomin Xu,

    1. Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong (China)
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  • Yaorong Su,

    1. Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong (China)
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  • Zikai He,

    1. Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong (China)
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  • Prof. Jianbin Xu,

    1. Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong (China)
    2. Institute of Molecular Functional Materials (Areas of Excellence Scheme, University Grants Committee), Hong Kong (China)
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  • Prof. Qian Miao

    Corresponding author
    1. Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong (China)
    2. Institute of Molecular Functional Materials (Areas of Excellence Scheme, University Grants Committee), Hong Kong (China)
    • Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong (China)

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  • This work was supported by grants from the Research Grants Council (project number: CUHK2/CRF/08) and the University Grants Committee, Hong Kong SAR, China (project number: AoE/P-03/08).

Abstract

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Add an O: A new strategy for preparing solution-processed organic thin-film transistors (OTFTs) is based on enhancing the surface energy of self-assembled monolayers (SAMs) by inserting polar oxygen atoms into the long alkyl chain of phosphonic acids. SAMs of these phosphonic acids on a high-k metal oxide layer lead to solution-processed n-channel OTFTs with average field effect mobilities of up to 2.5 cm2 V−1 s−1 and low operational voltages.

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