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Keywords:

  • doping;
  • nanowires;
  • semiconductor plasmonics;
  • silicon;
  • surface plasmon resonances
Thumbnail image of graphical abstract

Localized surface plasmon resonances are generated in doped silicon nanowires by the absorption of mid-infrared light. In their Communication on page 8079 ff., M. A Filler and L.-W. Chou report a method to incorporate multiple, axially aligned, doped regions along the length of individual silicon nanowires. Their approach promises new opportunities to use the world's most ubiquitous semiconductor for catalysis, molecular detection, and energy harvesting.