Fiber-Based Flexible All-Solid-State Asymmetric Supercapacitors for Integrated Photodetecting System

Authors

  • Xianfu Wang,

    1. Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)
    2. State Key Laboratory for Superlattices and Microstructures, Institution of Semiconductors, Chinese Academy of Science, Beijing, 100083 (China)
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  • Bin Liu,

    1. Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)
    2. State Key Laboratory for Superlattices and Microstructures, Institution of Semiconductors, Chinese Academy of Science, Beijing, 100083 (China)
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  • Rong Liu,

    1. Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)
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  • Qiufan Wang,

    1. Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)
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  • Xiaojuan Hou,

    1. Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)
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  • Prof. Di Chen,

    Corresponding author
    1. Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)
    • Di Chen, Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)

      Rongming Wang, Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China)

      Guozhen Shen, State Key Laboratory for Superlattices and Microstructures, Institution of Semiconductors, Chinese Academy of Science, Beijing, 100083 (China)

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  • Prof. Rongming Wang,

    Corresponding author
    1. Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China)
    • Di Chen, Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)

      Rongming Wang, Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China)

      Guozhen Shen, State Key Laboratory for Superlattices and Microstructures, Institution of Semiconductors, Chinese Academy of Science, Beijing, 100083 (China)

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  • Prof. Guozhen Shen

    Corresponding author
    1. State Key Laboratory for Superlattices and Microstructures, Institution of Semiconductors, Chinese Academy of Science, Beijing, 100083 (China)
    • Di Chen, Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074 (China)

      Rongming Wang, Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Department of Physics, Beijing University of Aeronautics and Astronautics, Beijing 100191 (China)

      Guozhen Shen, State Key Laboratory for Superlattices and Microstructures, Institution of Semiconductors, Chinese Academy of Science, Beijing, 100083 (China)

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  • We acknowledge the support from the National Natural Science Foundation (91123008, 61377033), the 973 Program of China (2011CB933300), the Program for New Century Excellent Talents of the University in China (grant no. NCET-11-0179), and the Wuhan Science and Technology Bureau (20122497).

Abstract

Integrated nanodevices with the capability of storing energy are widely applicable and have thus been studied extensively. To meet the demand for flexible integrated devices, all-solid-state asymmetric supercapacitors that simultaneously realize energy storage and optoelectronic detection were fabricated by growing Co3O4 nanowires on nickel fibers, thus giving the positive electrode, and employing graphene as both the negative electrode and light-sensitive material. The as-assembled integrated systems were characterized by an improved energy storage, enhanced power density (at least by 1860 % enhanced) by improving the potential window from 0–0.6 V to 0—1.5 V, excellent photoresponse to white light, and superior flexibility of both the fiber-based asymmetric supercapacitor and the photodetector. Such flexible integrated devices might be used in smart and self-powered sensory, wearable, and portable electronics.

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