A Dynamic Random Access Memory Based on a Conjugated Copolymer Containing Electron-Donor and -Acceptor Moieties (pages 2947–2951)
Qi-Dan Ling, Yan Song, Siew-Lay Lim, Eric Yeow-Hwee Teo, Yoke-Ping Tan, Chunxiang Zhu, Daniel Siu Hhung Chan, Dim-Lee Kwong, En-Tang Kang and Koon-Gee Neoh
Article first published online: 27 MAR 2006 | DOI: 10.1002/anie.200504365
Remember this: The conjugated copolymer PFOxPy, which contains both electron-donor and -acceptor groups, exhibits dynamic random access memory behavior in the sandwich structure ITO/PFOxPy/Al (see picture). The device is characterized by low read, write, and erase voltages, a high ON/OFF current ratio (up to 106), stable ON and OFF states under a constant stress of −1 V, and up to 108 read cycles at a read voltage of −1 V.