A Practical, Self-Catalytic, Atomic Layer Deposition of Silicon Dioxide (pages 6177–6179)
Julien Bachmann, Robert Zierold, Yuen Tung Chong, Roland Hauert, Chris Sturm, Rüdiger Schmidt-Grund, Bernd Rheinländer, Marius Grundmann, Ulrich Gösele and Kornelius Nielsch
Version of Record online: 11 JUL 2008 | DOI: 10.1002/anie.200800245
Molecular self-attack: According to mythology, a scorpion may sting itself to death; similarly, 3-aminopropyltriethoxysilane catalyzes its own hydrolysis in the atomic layer deposition (ALD) of SiO2 thin films and nanostructures. Between 120 and 200 °C, the growth rate is constant at 0.06 nm per ALD cycle. The SiO2 films are chemically and optically pure. SiO2 nanotubes of aspect ratio 500 exhibit smooth walls of accurately controlled thickness.