Doping of Organic Semiconductors: Impact of Dopant Strength and Electronic Coupling (pages 7751–7755)
Henry Méndez, Georg Heimel, Andreas Opitz, Katrein Sauer, Patrick Barkowski, Martin Oehzelt, Junshi Soeda, Toshihiro Okamoto, Jun Takeya, Jean-Baptiste Arlin, Jean-Yves Balandier, Yves Geerts, Norbert Koch and Ingo Salzmann
Article first published online: 19 JUN 2013 | DOI: 10.1002/anie.201302396
Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative model based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible to discriminate the two models. The latter is clearly favored, suggesting strategies for the chemical design of more efficient molecular dopants.