SEARCH

SEARCH BY CITATION

Abstract

The siloxane structure formed in photo-oxidized poly(methylphenylsilane) and poly(methylpropylsilane) is evaluated to clarify its effect on resist sensitivity. It is produced by 17–35 mol% where exposure energy corresponds to the resist sensitivity. This structure change enhances polymer solubility with the developer. Photo-oxidation reaction is found to be an important factor for fabricating organosilane polymer resist patterns.