The importance of organosilane polymer photo-oxidation in resist pattern fabrication
Article first published online: 9 MAR 2003
Copyright © 1987 John Wiley & Sons, Inc.
Journal of Applied Polymer Science
Volume 33, Issue 8, pages 2787–2793, June 1987
How to Cite
Ban, H. and Sukegawa, K. (1987), The importance of organosilane polymer photo-oxidation in resist pattern fabrication. J. Appl. Polym. Sci., 33: 2787–2793. doi: 10.1002/app.1987.070330813
- Issue published online: 9 MAR 2003
- Article first published online: 9 MAR 2003
- Manuscript Accepted: 5 NOV 1986
- Manuscript Received: 29 JUL 1986
The siloxane structure formed in photo-oxidized poly(methylphenylsilane) and poly(methylpropylsilane) is evaluated to clarify its effect on resist sensitivity. It is produced by 17–35 mol% where exposure energy corresponds to the resist sensitivity. This structure change enhances polymer solubility with the developer. Photo-oxidation reaction is found to be an important factor for fabricating organosilane polymer resist patterns.