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Keywords:

  • photoresists;
  • polyimides;
  • dielectric properties

Abstract

A chemically amplified photosensitive polyimide based on polyhydroxyimide (PHI) from cyclobutanetetracarboxylic dianhydride and 4,4′-(hexafluoroisopropylidene)bis(2-aminophenol), 4,4′-methylenebis[2,6-bis(hydroxymethyl)phenol] (MBHP) as a crosslinker, and (5-propylsulfonyloxyimino-5H-thiophen-2-ylidene)-(2-methylphenyl)acetonitrile (PTMA) as a photoacid generator was developed to obtain the abilities of low temperature patterning, low dielectric constant, and high sensitivity. The chemically amplified photosensitive polyimide, consisting of PHI (70 wt %), MBHP (20 wt %), and PTMA (10 wt %), showed a high sensitivity (D0.5) of 5.9 mJ/cm2 and a good contrast (γ0.5) of 3.9, respectively, producing a clear negative-tone line-and-space pattern with 6-μm resolution. Furthermore, the chemically amplified photosensitive polyimide showed a high transparency in the i-line region and a low dielectric constant of 2.54. © 2009 Wiley Periodicals, Inc. J Appl Polym Sci, 2009