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Keywords:

  • EMI;
  • electroless;
  • CuS;
  • polyacrylonitrile

Abstract

In this work, the electroless copper method with different reductant compositions (NaHSO3/Na2 S2O3·5H2O and Na2S2O3·5H2O) without sensitizing and activating, was used to deposit copper-sulfide deposition on the polyacrylonitrile (PAN) surface for electromagnetic interference (EMI) shielding materials. The weak reductant, NaHSO3, in the electroless copper method was used to control the phase of copper-sulfide deposition. The Cux(x=1–1.8)S was deposited on the PAN (CuxS-PAN) by reductant composition (NaHSO3/Na2S2O3·5H2O) and the Cux(x=1–1.8)S deposition of CuxS-PAN possesses three kinds of copper-sulfide phases (CuS, Cu1.75S and Cu1.8S). However, the electroless copper with reductant was only Na2S2O3·5H2O (without weak reductant, NaHSO3), the hexagonal CuS deposition was plated on the PAN (CuS-PAN) and increased the EMI shielding effectiveness of CuS-PAN composites about 10–15 dB. In this study, the best EMI SE of CuS-PAN and CuxS-PAN composites were about 27–30 dB and 15–17 dB respectively, as the cupric ion concentration was 0.24 M. The volume resistivity of CuS-PAN composite was about 1000 times lower than that of CuxS-PAN composite and lowest volume resistivity of CuS-PAN composites was 0.012 Ω cm, as the cupric ion concentration was 0.24 M. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2010