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Dependence of the dielectric constant on the fluorine content and porosity of polyimides

Authors

  • Muhammad Bisyrul Hafi Othman,

    1. School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300 Nibong Tebal, Pulau Pinang, Malaysia
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  • Nicholas Ang Soon Ming,

    1. School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300 Nibong Tebal, Pulau Pinang, Malaysia
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  • Hazizan Md Akil,

    1. School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300 Nibong Tebal, Pulau Pinang, Malaysia
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  • Zulkifli Ahmad

    Corresponding author
    1. School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300 Nibong Tebal, Pulau Pinang, Malaysia
    • School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300 Nibong Tebal, Pulau Pinang, Malaysia===

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Abstract

The trend toward miniaturization in integrated circuit fabrication demands good interlayer dielectric materials. This need can be met by polyimide (PI), which has extreme thermal and chemical stability and, most importantly, a low dielectric constant. Four porous PIs with symmetrically substituted fluorine contents were synthesized. Different porosity levels were achieved with a sol–gel technique through the incorporation of 10 or 20% tetraethyl orthosilicate into the polymer matrix and then acid etching. Their dielectric constants were correlated with the fluorine contents and porosity levels. High porosity levels and higher fluorine contents induced substantial decreases in the PI dielectric constants (2.4–2.7). The resultant values were within the applicable range for dielectric materials in integrated circuits. © 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2011

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