Synthesis, Characterization, and Non-Volatile Memory Device Application of an N-Substituted Heteroacene

Authors

  • Chengyuan Wang,

    1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore), Fax: (+65) 67909081
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  • Jiangxin Wang,

    1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore), Fax: (+65) 67909081
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  • Dr. Pei-Zhou Li,

    1. School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 (Singapore)
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  • Dr. Junkuo Gao,

    1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore), Fax: (+65) 67909081
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  • Si Yu Tan,

    1. School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 (Singapore)
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  • Dr. Wei-Wei Xiong,

    1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore), Fax: (+65) 67909081
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  • Dr. Benlin Hu,

    1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore), Fax: (+65) 67909081
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  • Prof. Pooi See Lee,

    1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore), Fax: (+65) 67909081
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  • Prof. Yanli Zhao,

    1. School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 (Singapore)
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  • Prof. Qichun Zhang

    Corresponding author
    1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore), Fax: (+65) 67909081
    • School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore), Fax: (+65) 67909081

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Abstract

N-substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N-substituted heteroacene 2-(4′-(diphenylamino)phenyl)-4,11-bis((triisopropylsilyl)ethynyl)-1H-imidazo[4,5-b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich-structure memory devices based on DBIP have been fabricated and the devices show non-volatile and stable memory character with good endurance performance.

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