Determining the target value of ACICD to optimize the electrical characteristics of semiconductors using dual response surface optimization
Article first published online: 26 MAR 2013
Copyright © 2013 John Wiley & Sons, Ltd.
Applied Stochastic Models in Business and Industry
Special Issue: Special Issue on Statistics and Microelectronics
Volume 29, Issue 4, pages 377–386, July/August 2013
How to Cite
Lee, D.-H. and Kim, K.-J. (2013), Determining the target value of ACICD to optimize the electrical characteristics of semiconductors using dual response surface optimization. Appl. Stochastic Models Bus. Ind., 29: 377–386. doi: 10.1002/asmb.1973
- Issue published online: 12 AUG 2013
- Article first published online: 26 MAR 2013
- Manuscript Accepted: 20 FEB 2013
- Manuscript Revised: 8 DEC 2012
- Manuscript Received: 23 DEC 2011
- dual response optimization
After Cleaning Inspection Critical Dimension (ACICD), one of the main variables in the etch process, affects the electrical characteristics of fabricated semiconductor chips. Its target value should be determined to minimize the bias and variability of these electrical characteristics. This paper presents a case study in which the target value of ACICD is determined by the dual response optimization method. In particular, the recently developed posterior approach to dual response optimization is employed allowing the analyst to determine easily the optimal compromise between bias and variability in the electrical characteristics. The performance at the obtained optimal ACICD setting has been shown to be better than that at the existing setting. Copyright © 2013 John Wiley & Sons, Ltd.