Nanostructures in GaAs fabricated by molecular beam epitaxy
Article first published online: 17 NOV 2005
© 2005 Lucent Technologies Inc.
Bell Labs Technical Journal
Special Issue: Nanotechnology
Volume 10, Issue 3, pages 151–159, Autumn (Fall) 2005
How to Cite
Pfeiffer, L. N., West, K. W., Willett, R. L., Akiyama, H. and Rokhinson, L. P. (2005), Nanostructures in GaAs fabricated by molecular beam epitaxy. Bell Labs Tech. J., 10: 151–159. doi: 10.1002/bltj.20110
- Issue published online: 17 NOV 2005
- Article first published online: 17 NOV 2005
- Manuscript Accepted: JUN 2005
We review three novel techniques whereby the highly uniform twodimensional films produced by molecular beam epitaxy (MBE) can be further patterned into nanowires or nanostructures having quantum confinement in all three dimensions. These techniques have the potential of greatly extending the power and utility of the MBE method. © 2005 Lucent Technologies Inc.