Mixed Tetrahedral Zintl Clusters: Single Crystal Structure Determination of [Si4-xGex]4−, [(MesCu)2(Si4-xGex)]4−, and the 29Si MAS NMR Spectra of A4Si2Ge2 (A=K, Rb)

Authors

  • Markus Waibel,

    1. Department Chemie, Technische Universität München, Lichtenbergstraße 4, 85747 Garching (Germany), Fax: (+49) 89-289-13186
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  • Gabriele Raudaschl-Sieber,

    1. Department Chemie, Technische Universität München, Lichtenbergstraße 4, 85747 Garching (Germany), Fax: (+49) 89-289-13186
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  • Prof. Dr. Thomas F. Fässler

    Corresponding author
    1. Department Chemie, Technische Universität München, Lichtenbergstraße 4, 85747 Garching (Germany), Fax: (+49) 89-289-13186
    • Department Chemie, Technische Universität München, Lichtenbergstraße 4, 85747 Garching (Germany), Fax: (+49) 89-289-13186
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Abstract

original image

Mixing Si and Ge: An important step towards the formation of Si–Ge mixed semiconducting materials has been taken. The ternary Zintl phases A4Si2Ge2 and Rb12Si12Ge5 contain a heteroatomic [Si4−xGex]4− Zintl cluster. The mixed clusters have been isolated from solution in form of the salt [Rb([18]−crown–6)]2Rb2[(MesCu)2(Si3.3(1)Ge0.7(1))](NH3)12 (see figure).

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