Low-layered, transparent graphene is accessible by a chemical vapor deposition (CVD) technique on a Ni-catalyst layer, which is deposited on a <100> silicon substrate. The number of graphene layers on the substrate is controlled by the grain boundaries in the Ni-catalyst layer and can be studied by micro Raman analysis. Electrical studies showed a sheet resistance (Rsheet) of approximately 1435 Ω per □, a contact resistance (Rc) of about 127 Ω, and a specific contact resistance (Rsc) of approximately 2.8×10−4 Ω cm2 for the CVD graphene samples. Transistor output characteristics for the graphene sample demonstrated linear current/voltage behavior. A current versus voltage (Ids–Vds) plot clearly indicates a p-conducting characteristic of the synthesized graphene. Gas-sensor measurements revealed a high sensor activity of the low-layer graphene material towards H2 and CO. At 300 °C, a sensor response of approximately 29 towards low H2 concentrations (1 vol %) was observed, which is by a factor of four higher than recently reported.
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