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Synthesis, Characterization, Electronic and Gas-Sensing Properties towards H2 and CO of Transparent, Large-Area, Low-Layer Graphene

Authors

  • Emine Kayhan,

    1. Technische Universität Darmstadt, Eduard-Zintl-Institut, Fachbereich Chemie, Fachgebiet Anorganische Chemie, Petersenstrasse 18, 64287 Darmstadt (Germany), Fax: (+49) 6151-163470
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  • Ravi Mohan Prasad,

    1. Technische Universität Darmstadt, Fachbereich Material- und Geowissenschaften, Petersenstrasse 22, 64287 Darmstadt (Germany)
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  • Dr. Alexander Gurlo,

    1. Technische Universität Darmstadt, Fachbereich Material- und Geowissenschaften, Petersenstrasse 22, 64287 Darmstadt (Germany)
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  • Dr. Oktay Yilmazoglu,

    1. Technische Universität Darmstadt, Fachgebiet für Hochfrequenzelektronik, 64283 Darmstadt (Germany)
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  • Dr. Jörg Engstler,

    1. Technische Universität Darmstadt, Eduard-Zintl-Institut, Fachbereich Chemie, Fachgebiet Anorganische Chemie, Petersenstrasse 18, 64287 Darmstadt (Germany), Fax: (+49) 6151-163470
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  • Dr. Emanuel Ionescu,

    1. Technische Universität Darmstadt, Fachbereich Material- und Geowissenschaften, Petersenstrasse 22, 64287 Darmstadt (Germany)
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  • Songhak Yoon,

    1. EMPA, Solid State Chemistry and Catalysis, 8600 Dübendorf (Switzerland)
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  • Prof. Dr. Anke Weidenkaff,

    1. EMPA, Solid State Chemistry and Catalysis, 8600 Dübendorf (Switzerland)
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  • Prof. Dr. Jörg J. Schneider

    Corresponding author
    1. Technische Universität Darmstadt, Eduard-Zintl-Institut, Fachbereich Chemie, Fachgebiet Anorganische Chemie, Petersenstrasse 18, 64287 Darmstadt (Germany), Fax: (+49) 6151-163470
    • Technische Universität Darmstadt, Eduard-Zintl-Institut, Fachbereich Chemie, Fachgebiet Anorganische Chemie, Petersenstrasse 18, 64287 Darmstadt (Germany), Fax: (+49) 6151-163470
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Abstract

Low-layered, transparent graphene is accessible by a chemical vapor deposition (CVD) technique on a Ni-catalyst layer, which is deposited on a <100> silicon substrate. The number of graphene layers on the substrate is controlled by the grain boundaries in the Ni-catalyst layer and can be studied by micro Raman analysis. Electrical studies showed a sheet resistance (Rsheet) of approximately 1435 Ω per □, a contact resistance (Rc) of about 127 Ω, and a specific contact resistance (Rsc) of approximately 2.8×10−4 Ω cm2 for the CVD graphene samples. Transistor output characteristics for the graphene sample demonstrated linear current/voltage behavior. A current versus voltage (IdsVds) plot clearly indicates a p-conducting characteristic of the synthesized graphene. Gas-sensor measurements revealed a high sensor activity of the low-layer graphene material towards H2 and CO. At 300 °C, a sensor response of approximately 29 towards low H2 concentrations (1 vol %) was observed, which is by a factor of four higher than recently reported.

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