Separation of Electrical and Optical Energy Gaps: Selectively Adjusting the Electrical and Optical Properties for a Highly Efficient Blue Emitter

Authors

  • Dr. He Liu,

    1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 2699 Qianjin Avenue, Changchun, 130012 (P.R. China)
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  • Dr. Ping Chen,

    1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 2699 Qianjin Avenue, Changchun, 130012 (P.R. China)
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  • Dr. Dehua Hu,

    1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 2699 Qianjin Avenue, Changchun, 130012 (P.R. China)
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  • Xiangyang Tang,

    1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 2699 Qianjin Avenue, Changchun, 130012 (P.R. China)
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  • Dr. Yuyu Pan,

    1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 2699 Qianjin Avenue, Changchun, 130012 (P.R. China)
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  • Huanhuan Zhang,

    1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 2699 Qianjin Avenue, Changchun, 130012 (P.R. China)
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  • Wenqiang Zhang,

    1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 2699 Qianjin Avenue, Changchun, 130012 (P.R. China)
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  • Xiao Han,

    1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 2699 Qianjin Avenue, Changchun, 130012 (P.R. China)
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  • Qing Bai,

    1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 2699 Qianjin Avenue, Changchun, 130012 (P.R. China)
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  • Prof. Ping Lu,

    Corresponding author
    1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 2699 Qianjin Avenue, Changchun, 130012 (P.R. China)
    • State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 2699 Qianjin Avenue, Changchun, 130012 (P.R. China)

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  • Prof. Yuguang Ma

    1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 2699 Qianjin Avenue, Changchun, 130012 (P.R. China)
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Abstract

The design concept of separation of optical and electrical bandgap for wide bandgap materials is further developed in DCzSiPI. The HOMO/LUMO levels can be tuned by incorporation of PI and DCz substituents. The tetraphenylsilane core avoids the intramolecular charge transfer from DCz to PI (DCz=dimer carbazole, PI=phenanthro[9,10-d]imidazole). The allowed transitions are found to be from HOMO−1 to LUMO providing DCzSiPI with sufficient bandgap.

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