ChemInform Abstract: Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2.

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Abstract

Thin films of stoichiometric ZnSnN2, a new earth-abundant small bandgap semiconductor, are prepared by reactive RF magnetron sputter deposition from Zn0.75Sn0.25 or from elemental Zn and Sn at about 250 °C in an atmosphere of Ar and N2.

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