DC capacitor simulation by the boundary element method
Article first published online: 4 DEC 2006
Copyright © 2006 John Wiley & Sons, Ltd.
Communications in Numerical Methods in Engineering
Volume 23, Issue 9, pages 855–869, September 2007
How to Cite
Kirkup, S. (2007), DC capacitor simulation by the boundary element method. Commun. Numer. Meth. Engng., 23: 855–869. doi: 10.1002/cnm.929
- Issue published online: 10 AUG 2007
- Article first published online: 4 DEC 2006
- Manuscript Accepted: 28 AUG 2006
- Manuscript Revised: 6 AUG 2006
- Manuscript Received: 5 MAY 2006
- boundary element method;
- Laplace equation
When the direct current (DC) metallized thin film capacitor is fully charged the electromagnetic fields can be considered to have reached a steady state in which the governing equation is Laplace's equation. It is the computational analysis of the electrostatic state that is considered in this paper.
The capacitor is modelled as a stack made up of infinitesimally thin layers of metal on polymer. An integral equation method from the BEMLAP package (www.boundary-element-method.com (Introduction to the Boundary Element Method for Scientists and Engineers: The BEMLAP Fortran Library for Laplace Problems)) for modelling the electric field, based on the methods described in Kirkup (Fortran codes for computing the discrete Helmholtz integral operators; Adv. Comput. Math. 1998; 9:391–409). The method is applied to a typical capacitor structure and encouraging results are obtained. Copyright © 2006 John Wiley & Sons, Ltd.