Silica-supported titania powders with 50, 36, 13 and 4 wt % of TiO2 (TiO2-50/SiO2, TiO2-36/SiO2, TiO2-13/SiO2 and TiO2-4/SiO2) were prepared by hydrolysis of TiCl4 in the presence of silica, followed by calcination at 500 °C. The formation of TiOSi linkages was confirmed by diffuse reflectance infrared Fourier transform spectroscopy. Atomic force microscopy indicated the presence of titania crystals larger than 15 nm. All supported materials exhibited a blue-shift of the TiO2 absorption edge, which was attributed to an electronic semiconductor support interaction. Bandgap energies of TiO2-50/SiO2, TiO2-36/SiO2, TiO2-13/SiO2 and TiO24/SiO2 were measured to be 3.28, 3.36, 3.40 and 3.42 eV, respectively, as compared to 3.15 eV for unsupported TiO2. From these values, and from the quasi-Fermi level of electrons, a high anodic shift of both the valence and the conduction band was estimated. X-ray photoelectron spectroscopy (XPS) measurements of oxygen 1s- and titanium 2p-binding energies confirmed the anodic shift of the band edges.