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Time-Resolved Synchrotron Radiation Excited Optical Luminescence: Light-Emission Properties of Silicon-Based Nanostructures
Article first published online: 12 NOV 2007
DOI: 10.1002/cphc.200700226
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Sham, T.-K. and Rosenberg, R. A. (2007), Time-Resolved Synchrotron Radiation Excited Optical Luminescence: Light-Emission Properties of Silicon-Based Nanostructures. ChemPhysChem, 8: 2557–2567. doi: 10.1002/cphc.200700226
Publication History
- Issue published online: 13 DEC 2007
- Article first published online: 12 NOV 2007
- Manuscript Revised: 23 SEP 2007
- Manuscript Received: 31 MAR 2007
Funded by
- NSERC
- CFI
- OIT
- CRC
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences. Grant Number: DE-AC02-06CH11357
- NRC
- CIHR
- University of Saskatchewan
- MMO
- U.S. NSF. Grant Number: DMR-0084402
- Abstract
- Article
- References
- Cited By
Keywords:
- luminescence;
- nanostructures;
- time-resolved spectroscopy;
- synchrotron radiation;
- X-ray absorption spectroscopy
Abstract
The recent advances in the study of light emission from matter induced by synchrotron radiation: X-ray excited optical luminescence (XEOL) in the energy domain and time-resolved X-ray excited optical luminescence (TRXEOL) are described. The development of these element (absorption edge) selective, synchrotron X-ray photons in, optical photons out techniques with time gating coincide with advances in third-generation, insertion device based, synchrotron light sources. Electron bunches circulating in a storage ring emit very bright, widely energy tunable, short light pulses (<100 ps), which are used as the excitation source for investigation of light-emitting materials. Luminescence from silicon nanostructures (porous silicon, silicon nanowires, and Si–CdSe heterostructures) is used to illustrate the applicability of these techniques and their great potential in future applications.