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Structural Characterization and Temperature-Dependent Photoluminescence of Linear CdTe/CdSe/CdTe Heterostructure Nanorods

Authors

  • Aaron E. Saunders Prof.,

    1. Department of Chemical Engineering, Texas Materials Institute and Center for Nano- and Molecular Science and Technology, The University of Texas, Austin, TX 78712, USA, Fax: (+1) 512-471-7060
    2. Current address: Department of Chemical & Biological Engineering, The University of Colorado at Boulder, Boulder, CO, 80309, USA
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  • Bonil Koo,

    1. Department of Chemical Engineering, Texas Materials Institute and Center for Nano- and Molecular Science and Technology, The University of Texas, Austin, TX 78712, USA, Fax: (+1) 512-471-7060
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  • Xiaoyong Wang Dr.,

    1. Department of Physics, Texas Materials Institute and Center for Nano- and Molecular Science and Technology, The University of Texas, Austin, TX 78712, USA
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  • Chih-Kang Shih Prof.,

    1. Department of Physics, Texas Materials Institute and Center for Nano- and Molecular Science and Technology, The University of Texas, Austin, TX 78712, USA
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  • Brian A. Korgel Prof.

    1. Department of Chemical Engineering, Texas Materials Institute and Center for Nano- and Molecular Science and Technology, The University of Texas, Austin, TX 78712, USA, Fax: (+1) 512-471-7060
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Abstract

Linear CdTe|CdSe|CdTe heterostructure nanorods are synthesized by using a colloidal sequential reactant injection technique [Shieh et al., J. Phys. Chem. B2005, 109, 8538–8542]. The composition profiles of the individual nanorods are verified by using nanobeam elemental mapping by energy dispersive X-ray spectroscopy (EDS) and the photoluminescence emission spectra of the linear CdTe|CdSe|CdTe heterostructure nanorods are measured as a function of the temperature (down to 5 K). Photoluminescence is observed to occur from electron–hole recombination in both the CdSe core and across the heterojunction. Thermally activated trapping is found to influence both luminescence processes, thereby being more significant for the type II recombination across the CdSe|CdTe interface.

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