• Open Access

Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells

Authors

  • Dr. Jürgen Hüpkes,

    Corresponding author
    1. IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany), Fax: (+49) 2461 61 3735
    • IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany), Fax: (+49) 2461 61 3735
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  • Dr. Jorj I. Owen,

    1. IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany), Fax: (+49) 2461 61 3735
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  • Dr. Sascha E. Pust,

    Corresponding author
    1. IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany), Fax: (+49) 2461 61 3735
    • IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany), Fax: (+49) 2461 61 3735
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  • Dr. Eerke Bunte 

    1. IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany), Fax: (+49) 2461 61 3735
    2. Euroglas GmbH SOLAR, Dammühlenweg 60, 39340 Haldensleben (Germany)
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Abstract

Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided.

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