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Synthesis of Antimony-Based Nanowires Using the Simple Vapor Deposition Method

Authors

  • Yunlong Zi,

    1. Department of Physics, Purdue University, Physics Building, 525 Northwestern Avenue, West Lafayette, IN 47907 (USA)
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  • Yanjie Zhao,

    1. Department of Physics, Purdue University, Physics Building, 525 Northwestern Avenue, West Lafayette, IN 47907 (USA)
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  • Drew Candebat,

    1. School of Electrical and Computer Engineering, Purdue University, Electrical Engineering Building, 465 Northwestern Avenue, West Lafayette, IN 47907 (USA)
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  • Prof. Joerg Appenzeller,

    1. School of Electrical and Computer Engineering, Purdue University, Electrical Engineering Building, 465 Northwestern Avenue, West Lafayette, IN 47907 (USA)
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  • Prof. Chen Yang

    Corresponding author
    1. Department of Chemistry, Purdue University, Brown 4171 D, 560 Oval Street, West Lafayette, IN 47907 (USA)
    2. Department of Physics, Purdue University, Physics Building, 525 Northwestern Avenue, West Lafayette, IN 47907 (USA)
    • Department of Chemistry, Purdue University, Brown 4171 D, 560 Oval Street, West Lafayette, IN 47907 (USA)
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Abstract

III–V nanowires have attracted plenty of attention because of their potential outstanding performance in a wide range of applications. However, compared to other III–V nanowires, the synthesis of high quality Sb-based nanowires is less developed, which obstructs the progress towards further applications. In this study we report high quality GaSb and InSb nanowires synthesized by a simple vapor deposition method. Epitaxial growth of nanowires on growth substrates is demonstrated. Te doped GaSb nanowires are achieved through in situ doping during the vapor deposition process. Electrical measurements of nanowire field-effect transistors show high performance of the synthesized InSb nanowires.

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