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Article
Gate-Induced Modification of Water Adsorption on Dielectrics Probed by EFM and Carbon Nanotube FETs
Article first published online: 20 NOV 2012
DOI: 10.1002/cphc.201200628
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Pascal-Levy, Y., Shifman, E., Pal-Chowdhury, M., Hajaj, E. M., Shtempluck, O., Razin, A., Kochetkov, V. and Yaish, Y. E. (2012), Gate-Induced Modification of Water Adsorption on Dielectrics Probed by EFM and Carbon Nanotube FETs. ChemPhysChem, 13: 4202–4206. doi: 10.1002/cphc.201200628
Publication History
- Issue published online: 21 DEC 2012
- Article first published online: 20 NOV 2012
- Manuscript Revised: 16 OCT 2012
- Manuscript Received: 2 AUG 2012
Funded by
- ISF. Grant Number: 1334/06
- Abstract
- Article
- References
- Cited By
Keywords:
- adsorption;
- charge transfer;
- dielectrics;
- electric force microscopy;
- surface chemistry
Abstract
Humidity plays an important role in molecular electronics. It facilitates charge movement on top of dielectric layers and modifies the device transfer characteristics. Using two different methods to probe temporal charge redistribution on the surface of dielectrics, we were able to extract the surface humidity for the first time. The first method is based on the relaxation time constants of the current through carbon nanotube field-effect transistors (CNTFETs), and the second is based on electric force microscopy (EFM) measurements. Moreover, we found that applying external gate biases modifies the surface humidity. A theoretical model based on dielectrophoretic attraction between the water molecules and the substrate is introduced to explain this observation, and the results support our hypothesis. Furthermore, it is found that upon the adsorption of two to three layers of water the surface conductivity saturates.