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A Pedagogical Perspective on Ambipolar FETs

Authors

  • Prof. Moon Sung Kang,

    1. Department of Chemical Engineering, Soongsil University, Seoul, 156-743 (South Korea)
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  • Prof. C. Daniel Frisbie

    Corresponding author
    1. Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, 55455 (USA)
    • Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, 55455 (USA)
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Abstract

The operation of an ambipolar field-effect transistor (FET) is described using a simple diagram depicting the gate voltage and channel potential profile relative to the injection threshold voltage of charge carriers. From this diagram, the transition between transistor-operation regimes and the resulting current–voltage relations can be easily understood. Also, a practical guidance for the operation of an ambipolar FET is provided. In particular, conditions to achieve the true ambipolar regime, which is of particular interest for light-emitting transistor operation, and a correct method to extract electron and hole mobilities from a given current–voltage curve are presented.

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