Enhanced Performance of Solution-Processed TESPE-ADT Thin-Film Transistors

Authors

  • Dr. Liang-Hsiang Chen,

    1. Process Technology Division, Display Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan (Republic of China)
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    • These authors contributed equally to this work.

  • Tarng-Shiang Hu,

    1. Department of Chemistry, National Central University, Jhong-Li, Taiwan 32054 (Republic of China)
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    • These authors contributed equally to this work.

  • Dr. Peng-Yi Huang,

    1. Department of Chemistry, National Central University, Jhong-Li, Taiwan 32054 (Republic of China)
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    • These authors contributed equally to this work.

  • Prof. Choongik Kim,

    Corresponding author
    1. Department of Chemical & Biomolecular Engineering, Sogang University, 1 Shinsoo-Dong, Mapo-Gu, Seoul 121-742 (Republic of Korea)
    • Department of Chemical & Biomolecular Engineering, Sogang University, 1 Shinsoo-Dong, Mapo-Gu, Seoul 121-742 (Republic of Korea)
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  • Ching-Hao Yang,

    1. Department of Chemistry, National Central University, Jhong-Li, Taiwan 32054 (Republic of China)
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  • Juin-Jie Wang,

    1. Department of Chemistry, National Central University, Jhong-Li, Taiwan 32054 (Republic of China)
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  • Dr. Jing-Yi Yan,

    1. Process Technology Division, Display Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan (Republic of China)
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  • Dr. Jia-Chong Ho,

    1. Process Technology Division, Display Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan (Republic of China)
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  • Dr. Cheng-Chung Lee,

    1. Process Technology Division, Display Technology Center, Industrial Technology Research Institute, Hsinchu, Taiwan (Republic of China)
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  • Prof. Ming-Chou Chen

    Corresponding author
    1. Department of Chemistry, National Central University, Jhong-Li, Taiwan 32054 (Republic of China)
    • Department of Chemistry, National Central University, Jhong-Li, Taiwan 32054 (Republic of China)
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  • TESPE-ADT: 5,11-bis(4-triethylsilylphenylethynyl)anthradithiophene

Abstract

A solution-processed anthradithiophene derivative, 5,11-bis(4-triethylsilylphenylethynyl)anthradithiophene (TESPE-ADT), is studied for use as the semiconducting material in thin-film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin-coating and drop-casting) on various gate dielectrics as well as additional post-treatment are employed on thin films of TESPE-ADT, and p-channel OTFT transport with hole mobilities as high as ∼0.12 cm2 V−1 s−1 are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.

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