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From Molecular Gallium and Indium Siloxide Precursors to Amorphous Semiconducting Transparent Oxide Layers for Applications in Thin-Film Field-Effect Transistors
Article first published online: 16 JUL 2012
DOI: 10.1002/cplu.201200086
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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How to Cite
Samedov, K., Aksu, Y. and Driess, M. (2012), From Molecular Gallium and Indium Siloxide Precursors to Amorphous Semiconducting Transparent Oxide Layers for Applications in Thin-Film Field-Effect Transistors. ChemPlusChem, 77: 663–674. doi: 10.1002/cplu.201200086
Publication History
- Issue published online: 9 AUG 2012
- Article first published online: 16 JUL 2012
- Manuscript Revised: 21 JUN 2012
- Manuscript Received: 13 APR 2012
Funded by
- Evonik Industries-Degussa (Marl) Science-to-Business Center Nanotronics (Marl)
- Zentrales Laboratorium für Elektronenmikroskopie, TU-Berlin
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