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High Mobility in Solution-Processed 2,7-Dialkyl-[1]benzothieno[3,2-b][1]benzothiophene-Based Field-Effect Transistors Prepared with a Simplified Deposition Method

Authors

  • Dr. Silvia Colella,

    1. ISIS and icFRC, Université de Strasbourg and CNRS, 8 allée Gaspard Monge, 67000 Strasbourg (France)
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  • Dr. Christian Ruzié,

    1. Laboratoire de Chimie des Polymères, CP 206/01, Faculté des Sciences Université Libre de Bruxelles (ULB), Boulevard du Triomphe, 1050 Brussels (Belgium)
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  • Dr. Guillaume Schweicher,

    1. Laboratoire de Chimie des Polymères, CP 206/01, Faculté des Sciences Université Libre de Bruxelles (ULB), Boulevard du Triomphe, 1050 Brussels (Belgium)
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  • Dr. Jean-Baptiste Arlin,

    1. Laboratoire de Chimie des Polymères, CP 206/01, Faculté des Sciences Université Libre de Bruxelles (ULB), Boulevard du Triomphe, 1050 Brussels (Belgium)
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  • Dr. Jolanta Karpinska,

    1. Laboratoire de Chimie des Polymères, CP 206/01, Faculté des Sciences Université Libre de Bruxelles (ULB), Boulevard du Triomphe, 1050 Brussels (Belgium)
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  • Prof. Yves Geerts,

    1. Laboratoire de Chimie des Polymères, CP 206/01, Faculté des Sciences Université Libre de Bruxelles (ULB), Boulevard du Triomphe, 1050 Brussels (Belgium)
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  • Prof. Paolo Samorì

    Corresponding author
    1. ISIS and icFRC, Université de Strasbourg and CNRS, 8 allée Gaspard Monge, 67000 Strasbourg (France)
    • ISIS and icFRC, Université de Strasbourg and CNRS, 8 allée Gaspard Monge, 67000 Strasbourg (France)

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Abstract

A high performing solution-processed field-effect transistors based on 2,7-didodecyl[1]benzothieno[3,2-b][1]benzothiophene (C12-BTBT) has been fabricated by using a simple and straightforward two-step process. We have demonstrated that UV/ozone treatment of the Si/SiO2 substrates makes it possible to notably enhance the field-effect mobility in spin-coated C12-BTBT based OFETs reaching values as high as 2.7 cm2 V−1 s−1. The influence of this treatment relies essentially on the coverage of the dielectric surface, while the crystalline order remains unaffected. Importantly, the employed method is simple, cheap and easily up-scalable and provides outstanding OFET performances that are comparable to those obtained using expensive and complicated treatments.

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