High Mobility in Solution-Processed 2,7-Dialkyl-benzothieno[3,2-b]benzothiophene-Based Field-Effect Transistors Prepared with a Simplified Deposition Method
Version of Record online: 12 FEB 2014
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 79, Issue 3, pages 371–374, March 2014
How to Cite
Colella, S., Ruzié, C., Schweicher, G., Arlin, J.-B., Karpinska, J., Geerts, Y. and Samorì, P. (2014), High Mobility in Solution-Processed 2,7-Dialkyl-benzothieno[3,2-b]benzothiophene-Based Field-Effect Transistors Prepared with a Simplified Deposition Method. ChemPlusChem, 79: 371–374. doi: 10.1002/cplu.201300414
- Issue online: 14 MAR 2014
- Version of Record online: 12 FEB 2014
- Manuscript Received: 8 DEC 2013
- EC. Grant Number: 212311
- Marie-Curie ITN SUPERIOR. Grant Number: PITN-GA-2009–238177
- ERC project SUPRAFUNCTION. Grant Number: GA-257305
- International Center for Frontier Research in Chemistry
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