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Aerosol-Assisted Chemical Vapour Deposition of Transparent Zinc Gallate Films

Authors

  • Dr. Caroline E. Knapp,

    1. Department of Chemistry, University College London, 20 Gordon Street, Christopher Ingold Laboratories, London, WC1H 0AJ
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  • Joe A. Manzi,

    1. Department of Chemistry, University College London, 20 Gordon Street, Christopher Ingold Laboratories, London, WC1H 0AJ
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  • Dr. Andreas Kafizas,

    1. Department of Chemistry, University College London, 20 Gordon Street, Christopher Ingold Laboratories, London, WC1H 0AJ
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  • Prof. Ivan P. Parkin,

    1. Department of Chemistry, University College London, 20 Gordon Street, Christopher Ingold Laboratories, London, WC1H 0AJ
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  • Prof. Claire J. Carmalt

    Corresponding author
    1. Department of Chemistry, University College London, 20 Gordon Street, Christopher Ingold Laboratories, London, WC1H 0AJ
    • Department of Chemistry, University College London, 20 Gordon Street, Christopher Ingold Laboratories, London, WC1H 0AJ

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Abstract

Aerosol-assisted chemical vapour deposition (AACVD) reactions of GaMe3, ZnEt2 and the donor-functionalised alcohol HOCH2CH2OMe (6 equiv.) in toluene resulted in the deposition of amorphous transparent zinc gallate (ZnGa2O4) films at a range of temperatures (350–550 °C). The zinc–gallium oxide films were analyzed by scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray analysis, glancing-angle X-ray powder diffraction (XRD) and optical studies. The optimum growth temperature was found to be 450 °C, which produced transparent films with excellent coverage of the substrate. XPS confirmed the presence of zinc, gallium and oxygen in the films. Annealing these films at 1000 °C resulted in crystalline films and glancing-angle powder XRD showed that a zinc gallate spinel framework with a lattice parameter of a=8.336(5) Å was adopted.

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