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Review
Bulk growth of gallium nitride: challenges and difficulties
Article first published online: 9 NOV 2007
DOI: 10.1002/crat.200711002
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
1521-4079/asset/cover.gif?v=1&s=df1f1c19a638e09ee7d2c48615dfeb83df7f7d5a "Crystal Research and Technology")
Additional Information
How to Cite
Bockowski, M. (2007), Bulk growth of gallium nitride: challenges and difficulties. Cryst. Res. Technol., 42: 1162–1175. doi: 10.1002/crat.200711002
Publication History
- Issue published online: 9 NOV 2007
- Article first published online: 9 NOV 2007
- Manuscript Accepted: 25 JUL 2007
- Manuscript Received: 20 MAY 2007
Funded by
- Polish Ministry of Scientific Research. Grant Number: R003601
- Abstract
- References
- Cited By
Keywords:
- bulk growth, gallium nitride;
- HVPE method;
- high pressure growth from solution
Abstract
The present status of the GaN bulk growth by High Pressure Solution (HPS) method and combination of HPS and Hydride Vapor Phase Epitaxy (HVPE) methods is reviewed. Up to now the spontaneous high pressure solution growth of GaN results in crystals having habit of hexagonal platelets of surface area of 3 cm2 or needles with length up to 1 cm. Recently, the platelets and needles have been used as seeds for the HVPE growth. On the other hand, the LPE technique under pressure with pressure-grown GaN (hp-GaN), GaN/sapphire template, patterned GaN/sapphire template and free standing HVPE GaN as seeds has been examined and developed. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)