Crystal Research and Technology

Cover image for Vol. 47 Issue 3

Special Issue: Joint German–Polish Conference on Crystal Growth 2011

March 2012

Volume 47, Issue 3

Pages 221–362

Issue edited by: Keshra Sangwal, Dietmar Siche

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Original Papers
    1. You have free access to this content
      Cover Picture: Cryst. Res. Technol. 3/2012

      Version of Record online: 27 FEB 2012 | DOI: 10.1002/crat.201290002

  2. Issue Information

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Original Papers
    1. You have free access to this content
      Issue Information: Cryst. Res. Technol. 3/2012

      Version of Record online: 27 FEB 2012 | DOI: 10.1002/crat.201290003

  3. Contents

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Original Papers
    1. You have free access to this content
  4. Preface

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Original Papers
    1. You have free access to this content
      Preface: Cryst. Res. Technol. 3/2012 (page 228)

      Professor Peter Rudolph and Professor Ewa Talik

      Version of Record online: 27 FEB 2012 | DOI: 10.1002/crat.201110228

  5. Original Papers

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Contents
    5. Preface
    6. Original Papers
    1. The correlation between spatial alignment of dislocations, grain orientation, and grain boundaries in multicrystalline silicon (pages 229–236)

      E. Schmid, S. Würzner, C. Funke, Th. Behm, R. Helbig, O. Pätzold, H. Berek and M. Stelter

      Version of Record online: 13 OCT 2011 | DOI: 10.1002/crat.201100373

    2. High melting point oxides – a challenge for crystal growth (pages 247–252)

      D. Klimm, R. Bertram, Z. Galazka, S. Ganschow, D. Schulz and R. Uecker

      Version of Record online: 6 OCT 2011 | DOI: 10.1002/crat.201100407

    3. Influence of mechanical defects on the crystal lattice of silicon (pages 253–260)

      T. Jauß, A.N. Danilewsky, J. Wittge, A. Cröll, J. Garagorri, R. M. Elizalde, D. Allen and P. McNally

      Version of Record online: 17 NOV 2011 | DOI: 10.1002/crat.201100488

    4. Fundamentals and practice of metal contacts to wide band gap semiconductor devices (pages 261–272)

      M. A. Borysiewicz, E. Kamińska, M. Myśliwiec, M. Wzorek, A. Kuchuk, A. Barcz, E. Dynowska, M.-A. di Forte-Poisson, C. Giesen and A. Piotrowska

      Version of Record online: 15 DEC 2011 | DOI: 10.1002/crat.201100490

    5. Float zone (FZ) silicon: A potential material for advanced commercial solar cells? (pages 273–278)

      H.-J. Rost, A. Luedge, H. Riemann, F. Kirscht and F.-W. Schulze

      Version of Record online: 30 DEC 2011 | DOI: 10.1002/crat.201100534

    6. Numerical analysis of the influence of ultrasonic vibration on crystallization processes (pages 279–284)

      B. Ubbenjans, Ch. Frank-Rotsch, J. Virbulis, B. Nacke and P. Rudolph

      Version of Record online: 6 OCT 2011 | DOI: 10.1002/crat.201100413

    7. First principle studies on molecular doping of ZnO thin films by As2O3 (pages 293–298)

      T. Sorgenfrei, K. H. Bachem, J. Schneider, L. Kirste, M. Kunzer and M. Fiederle

      Version of Record online: 14 NOV 2011 | DOI: 10.1002/crat.201100470

    8. Numerical study on double-frequency TMF in Cz silicon growth (pages 299–306)

      N. Dropka, Ch. Frank-Rotsch and P. Rudolph

      Version of Record online: 14 NOV 2011 | DOI: 10.1002/crat.201100483

    9. Plasma-assisted MBE growth of GaN on Si(111) substrates (pages 307–312)

      M. Sobanska, K. Klosek, Z. R. Zytkiewicz, J. Borysiuk, B. S. Witkowski, E. Lusakowska, A. Reszka and R. Jakiela

      Version of Record online: 6 OCT 2011 | DOI: 10.1002/crat.201100408

    10. MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications (pages 313–320)

      B. Ściana, D. Radziewicz, D. Pucicki, I. Zborowska-Lindert, J. Serafińczuk, M. Tłaczała, M. Latkowska, J. Kováč and R. Srnanek

      Version of Record online: 17 NOV 2011 | DOI: 10.1002/crat.201100415

    11. Influence of GaN substrate off-cut on properties of InGaN and AlGaN layers (pages 321–328)

      M. Sarzynski, M. Leszczynski, M. Krysko, J. Z. Domagala, R. Czernecki and T. Suski

      Version of Record online: 24 NOV 2011 | DOI: 10.1002/crat.201100491

    12. Magnetocaloric effect in GdCu intermetallic compound (pages 341–346)

      M. Oboz, E. Talik and A. Winiarski

      Version of Record online: 15 DEC 2011 | DOI: 10.1002/crat.201100485

    13. Transparency of GaN substrates in the mid-infrared spectral range (pages 347–350)

      M. Welna, R. Kudrawiec, M. Motyka, R. Kucharski, M. Zając, M. Rudziński, J. Misiewicz, R. Doradziński and R. Dwiliński

      Version of Record online: 14 NOV 2011 | DOI: 10.1002/crat.201100443

    14. LiMn2O4 nanocrystalline electrode materials (pages 351–362)

      E. Talik, A. Załóg, D. Skrzypek, A. Guzik, P. Zajdel, M. Michalska and L. Lipińska

      Version of Record online: 24 NOV 2011 | DOI: 10.1002/crat.201100473

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