High-speed non-linear circuit models for p-n junction diodes

Authors

  • Leon O. Chua,

    1. Department of Electrical Engineering and Computer Sciences, and the Electronics Research Laboratory, University of California, Berkeley, CA 94720, U.S.A.
    Search for more papers by this author
  • Chwen-Cher Chang

    1. Department of Electrical Engineering and Computer Sciences, and the Electronics Research Laboratory, University of California, Berkeley, CA 94720, U.S.A.
    Search for more papers by this author

Abstract

Circuit models for both long-base and short-base p-n junction diodes which are valid for non-linear high-speed and high-frequency operations are presented. the diode model consists of a parallel connection of higher-order dynamic elements and includes the conventional diffusion model as a special case. the new dynamic model can be used for simulating arbitrary p-n junction diode circuits under all operating conditions. In particular, it is capable of simulating realistically the diode's reverse transient behaviour and providing an increasingly accurate approximation to the diffusion equation as the order of the model gets higher. the model is also shown to be capable of reproducing the frequency-dependent small-signal characteristics of p-n junction diodes.

The model is based mainly upon the device's physical operating principles. Perhaps the most significant implication of the model is the fact that it illustrates the important roles played by higher-order and dynamic elements in highspeed and high-frequency non-linear device modelling.

Ancillary