CVD of Titanium Oxide Thin Films from the Reaction of Tetrakis(dimethylamido)- titanium with Oxygen

Authors


  • DBB acknowledges the support of the Office of Science of the U.S. Department of Energy for work performed at the Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy under contract DE-AC05-00OR22725. ZLX acknowledges the support of the U.S. National Science Foundation (CHE-0212137) for the work performed at the University of Tennessee.

Abstract

TiO2 thin films on silicon wafers have been prepared from the reaction of Ti(NMe2)4 with O2 at 250–300 °C by CVD processes. These films, which are carbon free and contain no TiN or TiOxNy species, are amorphous before annealing but crystalline anatase after annealing at 600 °C in air. The average dielectric constant (κ) of the annealed films is 50(5), with an average leakage current of 5(3)×10–5 A cm–2, and breakdown strength of 1.8(0.3) MV cm–1.

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