The authors acknowledge the Polish Committee for Science Research for financial support grant no. 4T09A 152 23.
CVD of Thin Titanium Dioxide Films Using Hexanuclear Titanium Oxo Carboxylate Isopropoxides†
Article first published online: 17 OCT 2005
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Chemical Vapor Deposition
Volume 11, Issue 10, pages 399–403, October, 2005
How to Cite
Piszczek, P., Richert, M., Grodzicki, A., Talik, E. and Heimann, J. (2005), CVD of Thin Titanium Dioxide Films Using Hexanuclear Titanium Oxo Carboxylate Isopropoxides. Chem. Vap. Deposition, 11: 399–403. doi: 10.1002/cvde.200504214
- Issue published online: 17 OCT 2005
- Article first published online: 17 OCT 2005
- Manuscript Accepted: 30 AUG 2005
- Manuscript Received: 27 MAY 2005
- Precursors, heteronuclear;
- Titanium dioxide
TiO2 films can deposited at 400–600 °C on Si(111), carbon fiber (see Figure), and activated carbon grain substrates via thermal inducted CVD using [Ti6O6(OiPr)6(OOCR)6] (R = tBu (1), CH2tBu (2)) as precursors. Deposition of layers with a low content of impurities (lower than 2%) can be achieved using Ar/H2O as a carrier gas. The structure and surface morphology of films change with increasing temperature from large grain layers of anatase (TD = 440–460 °C), to close-packed crystals of rutile (TD = 580–600 °C).