The authors thank Prof. Pekka Hautojärvi at the Laboratory of Physics (TKK) for providing the facilities for the AFM measurements. Prof. Markku Leskelä, Laboratory of Inorganic Chemistry, University of Helsinki, is thanked for the opportunity to use their facilities for electrical characterization and XRR measurements. Dr. Timo Sajavaara is acknowledged for performing the TOF-ERDA measurements at IMEC in Leuven, Belgium. In addition, J. P. and J. N. thank the Wihuri Foundation for financial support. The study was also supported by the Academy of Finland (projects 204742 and 205777).
High Growth Rate of Erbium Oxide Thin Films in Atomic Layer Deposition from (CpMe)3Er and Water Precursors†
Article first published online: 17 OCT 2005
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Chemical Vapor Deposition
Volume 11, Issue 10, pages 415–419, October, 2005
How to Cite
Päiväsaari, J., Niinistö, J., Arstila, K., Kukli, K., Putkonen, M. and Niinistö, L. (2005), High Growth Rate of Erbium Oxide Thin Films in Atomic Layer Deposition from (CpMe)3Er and Water Precursors. Chem. Vap. Deposition, 11: 415–419. doi: 10.1002/cvde.200506396
- Issue published online: 17 OCT 2005
- Article first published online: 17 OCT 2005
- Manuscript Accepted: 24 AUG 2005
- Manuscript Received: 6 APR 2005
- Atomic layer deposition;
- Erbium oxide;
- Rare earth oxides
Organometallic tris(methylcyclopentadienyl)erbium and water were successfully exploited as precursors for the atomic layer deposition (ALD) of Er2O3 thin films. Deposition studies were carried out in the temperature range 175–450 °C, where Si(100) and soda-lime glass were used as substrates. ALD-type growth mechanism could be verified at relatively low deposition temperatures of 250 °C and 300 °C, where a high growth rate (1.5 Å per cycle) for an ALD process was obtained. The deposited Er2O3 films were smooth and very uniform, and contained only low concentrations of carbon and hydrogen as impurities. The films were crystalline with the (111) orientation of the cubic phase dominating. The effective permittivity of the Er2O3/native SiO2 insulator stack was approximately 10.