Fluidized-Bed MOCVD of Bi2O3 Thin Films from Bismuth Triphenyl under Atmospheric Pressure

Authors

  • Nicolas Reuge,

    1. Laboratoire de Génie Chimique, UMR CNRS 5503, Université de Toulouse, INPT, ENSIACET 4, Allée Emile Monso, BP 84234, 31432 Toulouse Cedex 4 (France)
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  • Jeannette Dexpert-Ghys,

    1. CEMES, UPR CNRS 8011 29 rue Jeanne Marvig, 31055 Toulouse Cedex (France)
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  • Brigitte Caussat

    Corresponding author
    1. Laboratoire de Génie Chimique, UMR CNRS 5503, Université de Toulouse, INPT, ENSIACET 4, Allée Emile Monso, BP 84234, 31432 Toulouse Cedex 4 (France)
    • Laboratoire de Génie Chimique, UMR CNRS 5503, Université de Toulouse, INPT, ENSIACET 4, Allée Emile Monso, BP 84234, 31432 Toulouse Cedex 4 (France).
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  • This project has been supported by the French Agence Nationale de la Recherche, Réseau National Matériaux et Procédés (ANR RNMP05-PRONANOX), and by the Midi-Pyrénées Regional Council.

Abstract

Bi2O3 films have been deposited on alumina particles by Fluidized Bed Chemical Vapor Deposition at atmospheric pressure, using bismuth triphenyl and oxygen as precursors. In the operating range tested, the presence of Bi on the whole particles has been evidenced by EDX, and the existence of the α and γ phases of Bi2O3 has been revealed consistently by Raman spectroscopy and by XRD.

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