This project has been supported by the French Agence Nationale de la Recherche, Réseau National Matériaux et Procédés (ANR RNMP05-PRONANOX), and by the Midi-Pyrénées Regional Council.
Fluidized-Bed MOCVD of Bi2O3 Thin Films from Bismuth Triphenyl under Atmospheric Pressure†
Article first published online: 9 JUN 2010
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Chemical Vapor Deposition
Volume 16, Issue 4-6, pages 123–126, June 2010
How to Cite
Reuge, N., Dexpert-Ghys, J. and Caussat, B. (2010), Fluidized-Bed MOCVD of Bi2O3 Thin Films from Bismuth Triphenyl under Atmospheric Pressure. Chem. Vap. Deposition, 16: 123–126. doi: 10.1002/cvde.200904280
- Issue published online: 29 JUN 2010
- Article first published online: 9 JUN 2010
- Manuscript Revised: 8 FEB 2010
- Manuscript Received: 20 OCT 2009
- Bismuth oxide;
- Bismuth triphenyl;
- Fluidized bed, XRD
Bi2O3 films have been deposited on alumina particles by Fluidized Bed Chemical Vapor Deposition at atmospheric pressure, using bismuth triphenyl and oxygen as precursors. In the operating range tested, the presence of Bi on the whole particles has been evidenced by EDX, and the existence of the α and γ phases of Bi2O3 has been revealed consistently by Raman spectroscopy and by XRD.