CVD of Copper(I) Nitride

Authors

  • Anna Fallberg,

    Corresponding author
    1. Department of Materials Chemistry, The Ångström Laboratory, Uppsala University Box 538, 751 21, Uppsala (Sweden)
    • Department of Materials Chemistry, The Ångström Laboratory, Uppsala University Box 538, 751 21, Uppsala (Sweden).
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  • Mikael Ottosson,

    1. Department of Materials Chemistry, The Ångström Laboratory, Uppsala University Box 538, 751 21, Uppsala (Sweden)
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  • Jan-Otto Carlsson

    1. Department of Materials Chemistry, The Ångström Laboratory, Uppsala University Box 538, 751 21, Uppsala (Sweden)
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Abstract

Copper(I) nitride (Cu3N) is deposited by CVD using copper(II) hexafluoroacetylacetonate (Cu(hfac)2), ammonia, and water as precursors. The influences of process parameters on growth rate, phase content, chemical composition and morphology are studied. The introduction of water is found to increase film growth rate on the SiO2 substrate. Films are deposited in the tem-perature range 250–550 °C. Single-phase Cu3N is obtained up to 400 °C. A phase mixture of Cu3N and Cu is obtained at 425 °C, while a temperature of 550 °C and above yields single-phase Cu. X-ray diffraction (XRD) confirms that Cu3N has the cubic, anti-ReO3-type structure; with a cell parameter in the range 3.805–3.816 Å. X-ray photoelectron spectroscopy (XPS) verifies the Cu3N stoichiometry. The films are free from impurities (below the detection limit of 1%) at a large excess of ammonia. Scanning electron microscopy (SEM) shows facetted grains, with the faces becoming more well-defined at higher temperatures.

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