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Keywords:

  • III-V materials;
  • Gas-phase synthesis;
  • Light-emitting diode;
  • Monodispersed particles;
  • Semiconductor

Abstract

Gallium nitride (GaN) nanoparticles are successfully synthesized via an improved microwave plasma-enhanced (MPE)CVD method. Optimization of the MPECVD process is achieved by manipulating the plasma operating conditions, such as antenna length, input power, and pressure. The resulting GaN nanoparticles have an average size of around 8.5 nm with a very narrow size distribution, indicating that well-dispersed nanoparticles can be obtained, due to the negative charge of the particles caused by the collision of electrons in the plasma process. In addition, a satisfactory stoichiometric ratio, high crystallinity, and relatively good photoluminescence (PL) properties of the GaN nanoparticles are achieved, due to the improved process.