A New Method for the Growth of Zinc Oxide Nanowires by MOCVD using Oxygen-Donor Adducts of Dimethylzinc


  • We thank the Knowledge Centre for Materials Chemistry for support (Raman and PL) and SAFC Hitech for the provision of the organometallic precursors. KB is indebted to SAFC Hitech for financial support. We are also grateful to Dr. G.W. Critchlow (ISST, Loughborough, UK) for provision of the AES data.


The oxygen donor adducts of dimethylzinc [Me2Zn(L)] (L = tetrahydrofuran, tetrahydropyran, or furan) are used without pre-reaction with oxygen for the growth of ZnO by liquid injection metal-organic (MO)CVD over the temperature range 350–550 °C. Vertically-aligned ZnO nanowires are deposited in a narrow temperature range centered on ∼500 °C. At other deposition temperatures, the ZnO films show continuous polycrystalline morphologies. At room temperature, the ZnO nanowires exhibit intense near band-edge photoluminescence (PL) at emission energies of 3.26 to 3.28 eV, and show minimal defect-related visible emission. Analysis of the ZnO nanowires by Auger electron spectroscopy (AES) shows that they are of high purity, with carbon not detected at an estimated detection limit of 0.5 at.-%.