An Hardy is a postdoctoral research fellow of the Research Foundation–Flanders (FWO-Vlaanderen). Daan Dewulf is funded by a Ph.D. grant of the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT–Vlaanderen).
Atomic Layer Deposition of Gadolinium Aluminate using Gd(iPrCp)3, TMA, and O3 or H2O†
Article first published online: 22 JUN 2010
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Chemical Vapor Deposition
Volume 16, Issue 4-6, pages 170–178, June 2010
How to Cite
Adelmann, C., Pierreux, D., Swerts, J., Dewulf, D., Hardy, A., Tielens, H., Franquet, A., Brijs, B., Moussa, A., Conard, T., Van Bael, M. K., Maes, J. W., Jurczak, M., Kittl, J. A. and Van Elshocht, S. (2010), Atomic Layer Deposition of Gadolinium Aluminate using Gd(iPrCp)3, TMA, and O3 or H2O. Chem. Vap. Deposition, 16: 170–178. doi: 10.1002/cvde.200906833
- Issue published online: 29 JUN 2010
- Article first published online: 22 JUN 2010
- Manuscript Revised: 11 DEC 2009
- Manuscript Received: 28 OCT 2009
- Gadolinium aluminate;
- Gadolinium oxide;
- High-κ oxides
For future generations of non-volatile memory applications, the replacement of the interpoly dielectric by a suitable high-κ material is required. Rare-earth aluminates are potential candidates because they are predicted to combine a high dielectric permittivity with a large band gap. We demonstrate the atomic layer deposition (ALD) of GdxAl2-xO3 layers using Gd(iPrCp)3, trimethyl-aluminum (TMA), and H2O or O3. Process windows for both H2O and O3 as oxidants are explored. H2O is shown to lead to better GdxAl2-xO3 film properties than O3, although the accessible composition range is limited because of the hygroscopic nature of Gd2O3.