Dedicated to Professor Rudi van Eldik on the occasion of his 65th birthday.
Full Paper
Methylated [(benzene)(1,3-butadiene)Ru0] Derivatives as Novel MOCVD Precursors with Favorable Properties†‡
Article first published online: 16 MAR 2011
DOI: 10.1002/cvde.201006853
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Jipa, I., Siddiqi, M. A., Siddiqui, R. A., Atakan, B., Marbach, H., Cremer, T., Maier, F., Steinrück, H.-P., Danova, K., Popovska, N., Heinemann, F. W. and Zenneck, U. (2011), Methylated [(benzene)(1,3-butadiene)Ru0] Derivatives as Novel MOCVD Precursors with Favorable Properties. Chem. Vap. Deposition, 17: 15–21. doi: 10.1002/cvde.201006853
- †
- ‡
Generous financial support by the Deutsche Forschungsgemeinschaft (DFG) through the priority program SPP 1119 and grant MA 4246/1-1 and the Fonds der Chemischen Industrie is gratefully acknowledged. We thank Elisabeth Zillner and Karin Titze for their valuable experimental contributions.
Publication History
- Issue published online: 16 MAR 2011
- Article first published online: 16 MAR 2011
- Manuscript Revised: 13 AUG 2010
- Manuscript Received: 31 MAR 2010
Funded by
- Deutsche Forschungsgemeinschaft (DFG). Grant Numbers: SPP 1119, MA 4246/1-1
- Fonds der Chemischen Industrie
Keywords:
- MOCVD;
- Precursor complexes;
- Ruthenium thin film;
- Thermal behavior;
- XPS
Abstract
[(Benzene)(2-methyl-1,3-butadiene)Ru0] (1), [(benzene)(2,3-dimethyl-1,3-butadiene)Ru0] (2), and [(2,3-dimethyl-1,3-butadiene)(toluene)Ru0] (3) are prepared and tested as new metal-organic (MO) ruthenium precursor complexes with favorable deposition properties for the CVD of thin ruthenium films. X-ray diffraction (XRD) studies of single crystals of the complexes are characteristic for true Ru0 π-complexes without molecular structure peculiarities or significant intermolecular interactions in the solid state, which can hinder undecomposed evaporation. Differential thermal analysis (DTA) and vapor pressure data qualify the compounds as almost ideal MOCVD precursors. Thin ruthenium films are deposited successfully on silicon wafers at substrate temperatures between 200 and 400 °C in a nitrogen gas atmosphere. X-ray photoelectron spectroscopy (XPS), four-point probe conductivity measurements, and atomic force microscopy (AFM) are used to characterize the films. All films consist of polycrystalline metallic ruthenium with a low surface roughness.

1521-3862/asset/2112_left.gif?v=1&s=617ec4ec4274d35804744a83df165127e7c2d301)
