The authors acknowledge STMicroelectronics, “Rhône-Alpes” French territorial community, and CNRS for sponsoring this study.
Developments of TaN ALD Process for 3D Conformal Coatings†
Article first published online: 15 DEC 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Chemical Vapor Deposition
Volume 17, Issue 10-12, pages 284–295, December, 2011
How to Cite
Brizé, V., Prieur, T., Violet, P., Artaud, L., Berthomé, G., Blanquet, E., Boichot, R., Coindeau, S., Doisneau, B., Farcy, A., Mantoux, A., Nuta, I., Pons, M. and Volpi, F. (2011), Developments of TaN ALD Process for 3D Conformal Coatings. Chem. Vap. Deposition, 17: 284–295. doi: 10.1002/cvde.201100045
- Issue published online: 15 DEC 2011
- Article first published online: 15 DEC 2011
- Manuscript Revised: 29 JUL 2011
- Manuscript Received: 20 DEC 2010
- ALD process, Mass transport, Thermodynamics, Thin film conformality, Trough silicon vias
There is a growing interest in producing tantalum nitride (TaN) thin films for various industrial applications. For example, in microelectronics, the development of IC technology is driven by the need to increase both performance and functionality while reducing power and cost. This goal can be achieved by several solutions among which the introduction of architecture enhancements such as 3D integration. The most challenging step is the deposition of a conformal, continuous, and adherent diffusion barrier. In this work, atomic layer deposition (ALD) of TaN thin films is explored using the combination between the thermodynamical behavior of the precursor, mass transfer in the reactor, and the operating conditions. TaN thin film deposition on very complex shape substrates, such as nanodots, TSV, silicon nanowires, and carbon nanotubes, has been evaluated.