This work has been supported by The Ministry of Knowledge Economy (MKE), Republic of Korea, under the ITRC (Information Technology Research Center) support program supervised by the IITA (Institute for Information Technology Advancement), IITA-2008-C1090-0804-0013, and by Korea University. We thank the research staff at Techno Semichem, Co., Ltd. for their generous synthesis and supply of DMGIP for us on many occasions. We also thank Dr. K.-S. An at Korea Research Institute of Chemical Technology for his help in obtaining the XPS data. Y. K. specially thanks his colleagues at the Department of Advanced Materials Chemistry who rendered him support in building the ALD machine. Y. K. also thanks Dr. W. C. Shin and Dr. K.-J. Choi at NCD Co., Ltd. for their technical assistance in running the ALD machine and performing the ALD experiments.
ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me2GaOiPr†
Article first published online: 9 SEP 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Chemical Vapor Deposition
Volume 17, Issue 7-9, pages 191–197, September, 2011
How to Cite
Lee, H., Kim, K., Woo, J.-J., Jun, D.-J., Park, Y., Kim, Y., Lee, H. W., Cho, Y. J. and Cho, H. M. (2011), ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me2GaOiPr. Chem. Vap. Deposition, 17: 191–197. doi: 10.1002/cvde.201106879
- Issue published online: 22 SEP 2011
- Article first published online: 9 SEP 2011
- Manuscript Received: 23 AUG 2011
- Manuscript Revised: 2 MAY 2011
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